ST75N75 n channel enhancement mode mosfe t 75.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. ST75N75 2011. v1 description ST75N75 is used trench technology to provide excell ent rds(on) and gate charge. those devices are suitable for use as load switch o r in pwm applications. pin configuration to220-3l pin confi marking feature 75v/40.0a, r ds(on) = 8m (typ.) @v gs = 10v super high density cell design for extremely low r ds(on) exceptional onresistance and maximum dc current capability to220 package design
ST75N75 n channel enhancement mode mosfe t 75.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. ST75N75 2011. v1 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drainsource voltage vdss 75 v gatesource voltage vgss 20 v continuous drain current (tj=150 ) ta=25 ta=70 id 93.0 75.0 a pulsed drain current idm 370 a avalanche current ias 7 0 a power dissipation ta=25 pd 200 w operation junction temperature tj 175 storgae temperature range tstg 55/175 thermal resistancejunction to ambient rja 0.75 /w
ST75N75 n channel enhancement mode mosfe t 75.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. ST75N75 2011. v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drain source breakdown voltage v (br)dss v gs =0v,id=250ua 75 v gate threshold voltage v gs(th) v ds =v gs ,id=250ua 2.0 4.0 v gate leakage current i gss v ds =0v,v gs =20v 100 na zero gate voltage drain current i dss v ds =48v,v gs =0v 1 ua drainsource on resistance r ds(on) v gs =10v,i d =40a 8 11 m diode forward voltage v sd i s =1.0a,v gs =0v 1.2 v dynamic total gate charge q g v ds =4.5v,v ds =70v i d 75a 30 nc gatesource charge q gs 29 gatedrain charge q gd 31 input capacitance c iss v ds =20v,vgs=0v f=1mhz 4780 pf output capacit ance c oss 540 reverse transfercapacitance c rss 180 turnon time t d(on) tr v dd =30v,r l = 15 v ds =10v,r g =1 48 ns 36 turnoff time t d(off) tf 150 49
ST75N75 n channel enhancement mode mosfe t 75.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. ST75N75 2011. v1 typical characterictics
ST75N75 n channel enhancement mode mosfe t 75.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. ST75N75 2011. v1 typical characterictics
ST75N75 n channel enhancement mode mosfe t 75.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. ST75N75 2011. v1 to220-3l package outline
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